tm ?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet september 2012 qfet ? fqd16n25c 250v n-channel mosfet features ? 16a, 250v, r ds(on) = 0.27 @v gs = 10 v ? low gate charge ( typical 41 nc) ? low crss ( typical 68 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fa irchild?s proprietary, planar stripe, dmos technology. this advanced technology has been e specially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters fo r uninterrupted power supplies and motor controls. d g s d-pak fqd series g s d absolute maximum ratings symbol parameter fqd16n25c units v dss drain-source voltage 250 v i d drain current - continuous (t c = 25c) 16 a - continuous (t c = 100c) 10.1 a i dm drain current - pulsed (note 1) 64 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 432 mj i ar avalanche current (note 1) 16 a e ar repetitive avalanche energy (note 1) 160 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 160 w - derate above 25c 1.28 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 c thermal characteristics symbol parameter fqd16n25c units r jc thermal resistance, junction-to-case 0.78 c /w r ja thermal resistance, junction-to-ambient 110 c /w
2 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fqd16n25c fqd16n25ctm d-pak 380mm 16mm 2,500 fqd16n25c fqd16n25ctf d-pak 380mm 16mm 2,000 electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 250 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.31 -- v/c i dss zero gate voltage drain current v ds = 250 v, v gs = 0 v -- -- 10 a v ds = 200 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 8a -- 0.22 0.27 g fs forward transconductance v ds = 40 v, i d =8 a (note 4) -- 10.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 830 1080 pf c oss output capacitance -- 170 220 pf c rss reverse transfer capacitance -- 68 89 pf switching characteristics t d(on) turn-on delay time v dd = 125 v, i d = 16a, r g = 25 (note 4, 5) -- 15 40 ns t r turn-on rise time -- 130 270 ns t d(off) turn-off delay time -- 135 280 ns t f turn-off fall time -- 105 220 ns q g total gate charge v ds = 200 v, i d = 16a, v gs = 10 v (note 4, 5) -- 41 53.5 nc q gs gate-source charge -- 5.6 -- nc q gd gate-drain charge -- 22.7 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 16 a i sm maximum pulsed drain-source diode forward current -- -- 64 a v sd drain-source diode forward voltage v gs = 0 v, i s = 16 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 16 a, di f / dt = 100 a/ s (note 4) -- 260 -- ns q rr reverse recovery charge -- 2.47 -- c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 2.7mh, i as = 16a, v dd = 50v, r g = 25 , starting t j = 25c 3. i sd 16a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
3 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 1 02 03 04 05 0 0.0 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v note : i d = 15.6a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 8.9 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 0.78 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 5 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet
peak diode recovery dv/dt test circuit & waveforms 6 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet
7 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet mechanical dimensions d-pak dimensions in millimeters
8 www.fairchildsemi.com fqd16n25c rev. c0 fqd16n25c 250v n-channel mosfet trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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